The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 02, 2007
Filed:
Feb. 17, 2006
Jack Zezhong Peng, San Jose, CA (US);
David Fong, Cupertino, CA (US);
Harry Shengwen Luan, Saratoga, CA (US);
Jianguo Wang, Cupertino, CA (US);
Zhongshang Liu, Plano, TX (US);
Jack Zezhong Peng, San Jose, CA (US);
David Fong, Cupertino, CA (US);
Harry Shengwen Luan, Saratoga, CA (US);
Jianguo Wang, Cupertino, CA (US);
Zhongshang Liu, Plano, TX (US);
KLP International, Ltd., Santa Clara, CA (US);
Abstract
Memory cells including an SRAM and an OTP memory unit that combine the advantages of both technologies and can be fabricated by standard CMOS manufacturing without additional masking. The concepts and details may be applied to and utilized in other systems requiring memory and/or employing other fabrication technologies. Among other advantages, the SRAM part of memory cells allows countless programming of the cell, which is useful, for example, during the prototyping. The OTP part is utilized to permanently program the memory cell by either using external data or the data already existing in the SRAM part of the cell. The value held by the OTP unit may also be written directly into the SRAM part of the cell.