The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 02, 2007
Filed:
Nov. 04, 2005
Hyoung-seok OH, Daejon, KR;
Hyun-kyu Yu, Daejon, KR;
Mun-yang Park, Daejon, KR;
Cheon-soo Kim, Daejon, KR;
Hyoung-Seok Oh, Daejon, KR;
Hyun-Kyu Yu, Daejon, KR;
Mun-Yang Park, Daejon, KR;
Cheon-Soo Kim, Daejon, KR;
Electronics and Telecommunications Research Institute, Daejeon, KR;
Abstract
Provided is a power amplifier which fits to a deep-submicron technology in radio frequency wireless communication. The power amplifier includes a cascode including a first transistor which receives and amplifies an input signal, and a second transistor which is connected to the first transistor in series and operated by a DC bias voltage; a third transistor which is connected between the cascode and an output end, operated by a dynamic gate bias and outputting a signal; and a voltage divider which includes first and second capacitors that are connected between the output end, i.e. a drain of the third transistor, and a ground in series, and provides the dynamic bias to a gate of the third transistor.