The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 02, 2007

Filed:

Feb. 18, 2005
Applicants:

Makoto Kosugi, Tokyo, JP;

Akira Nishino, Tokyo, JP;

Yasunori Ogawa, Tokyo, JP;

Inventors:

Makoto Kosugi, Tokyo, JP;

Akira Nishino, Tokyo, JP;

Yasunori Ogawa, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 3/60 (2006.01);
U.S. Cl.
CPC ...
Abstract

A distributed amplifier with a simple structure that permits miniaturization of circuit in which the input-side transmission line of the distributed amplifier is constituted by a coplanar line having a signal line and a ground face formed on the upper face of a dielectric substrate and the output-side transmission line of the distributed amplifier is constituted by a microstrip line having a signal line formed on the upper face of the dielectric substrate and a ground face formed on the lower face of the dielectric substrate. In addition, a plurality of amplification transistors is formed on the upper face of the dielectric substrate and each of the electrodes is connected to the signal line or the ground face that is formed on the upper face of the dielectric substrate. Because a large transistor-drive current does not flow to the input-side transmission line, the signal line can be made narrow and there is no increase in the required surface area even in the case of a coplanar line. Further, because the ground face of the coplanar line can be formed on the upper face of the dielectric substrate, the source electrodes or similar of the transistors can be grounded easily with a simple structure.


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