The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7276956 B1

PDF
Full Text
Expired
Date of Patent:
Oct. 02, 2007

Filed:

Jun. 22, 2005
Applicants:

Hiroshi Furuta, Kanagawa, JP;

Kenjyu Shimogawa, Kanagawa, JP;

Inventors:

Hiroshi Furuta, Kanagawa, JP;

Kenjyu Shimogawa, Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G05F 1/10 (2006.01);
U.S. Cl.
CPC ...
Abstract

An integrated circuit apparatus according to one embodiment of the invention has an NMOS transistor and a source voltage controller which controls the source voltage of the NMOS transistor according to operation mode. The source voltage controller changes the source voltage according to temperature. Since this integrated circuit apparatus changes the source voltage of the MOSFET based on temperature, it is controlled to have desired leakage current regardless of temperature change.


Find Patent Forward Citations

Furuta, Hiroshi. (2007). Integrated circuit apparatus controlling source voltage of mosfet based on temperature (U.S. Patent No. 7276956). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7276956

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