The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 02, 2007
Filed:
Apr. 07, 2005
Alexander O. Goushcha, Aliso Viejo, CA (US);
Richard A. Metzler, Medina, OH (US);
Alexander O. Goushcha, Aliso Viejo, CA (US);
Richard A. Metzler, Medina, OH (US);
Semicoa Semiconductors, Costa Mesa, CA (US);
Abstract
Fast silicon diodes and arrays with high quantum efficiency built on dielectrically isolated wafers. A waveguide is formed in the top surface of the silicon that utilizes total internal reflection from the Si—Si Oxide interface to form an internal mirror. This mirror reflects incoming light into the waveguide cavity, with the light being trapped there by surrounding reflective interfaces. A masking layer may be used to define an input window. Individual diodes or linear arrays may be formed as desired. Some alternate embodiments are described.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile