The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 02, 2007
Filed:
Aug. 01, 2005
Applicants:
Shanghui Larry Tu, Phoenix, AZ (US);
James Adams, Tempe, AZ (US);
Mohammed Quddus, Chandler, AZ (US);
Rajesh S. Nair, Milpitas, CA (US);
Inventors:
Shanghui Larry Tu, Phoenix, AZ (US);
James Adams, Tempe, AZ (US);
Mohammed Quddus, Chandler, AZ (US);
Rajesh S. Nair, Milpitas, CA (US);
Assignee:
Semiconductor Components Industries, L.L.C., Phoenix, AZ (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 29/94 (2006.01); H01L 31/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A lateral FET cell is formed in a body of semiconductor material. The lateral FET cell includes a super junction structure formed in a drift region between a drain contact and a body region. The super junction structure includes a plurality of spaced apart filled trenches bounding in part a multiplicity of striped doped regions having opposite or alternating conductivity types.