The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 02, 2007
Filed:
Jun. 01, 2005
Tomoe Yamamoto, Kanagawa, JP;
Tomoe Yamamoto, Kanagawa, JP;
NEC Electronics Corporation, Kanagawa, JP;
Abstract
A method for depositing a metal compound film on the wafer by using a vapor phase deposition apparatus, including: forming a thin film on the wafer in an interior of the vapor phase deposition apparatusby introducing a source gas for the metal compound film containing Hf or Zr; unloading the wafer having the metal compound film formed thereon from the interior of the vapor phase deposition apparatus; introducing a reactive gas in the interior of the vapor phase deposition apparatusto immobilize the unreacted organic compoundderived from the source gas remained in the interior of the vapor phase deposition apparatus; loading another wafer in the interior of the vapor phase deposition apparatus; and depositing metal compound film on another wafer by further introducing the source gas in the interior of the vapor phase deposition apparatus, in the condition that the unreacted organic compoundexists therein as an immobilized form, is presented.