The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 02, 2007
Filed:
Dec. 30, 2004
Kang-hyun Lee, Yongin, KR;
Kang-Hyun Lee, Yongin, KR;
Dongbu Electronics Co., Ltd., Seoul, KR;
Abstract
A method for forming a contact hole for a dual damascene interconnection in a semiconductor device. A via hole is formed to expose an etch stop film on a lower metal film through an intermetal insulating film. The via hole is filled with a sacrificial film. A bottom antireflective coating film and a mask pattern are formed on the intermetal insulating film and the sacrificial film. An etching process is performed to form a trench to expose a portion of a surface of the intermetal insulating film and a top surface of the sacrificial film. A post etch treatment is performed to remove the sacrificial film, using the mask pattern as an etching mask. The exposed etch stop film is removed to expose a portion of a surface of the lower metal film. A passivation process is performed for the exposed surface of the lower metal film.