The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 02, 2007
Filed:
Sep. 21, 2005
Sung Ku Kwon, Daejeon, KR;
Sung Ku Kwon, Daejeon, KR;
Abstract
Provided is a method of manufacturing a silicon on insulator (SOI) substrate, which includes the steps of (a) forming a buried oxidation layer to a predetermined depth of a first wafer and forming an oxidation layer on a surface of the first wafer; (b) bonding a second wafer onto the first wafer; (c) selectively removing the oxidation layer so as to expose a bottom surface of the first wafer; (d) selectively removing the exposed bottom silicon layer of the first wafer using the buried oxidation layer as an etch stop layer; and (e) removing the buried oxidation layer to expose a top surface of the first wafer, and thinning the exposed top surface of the first wafer to a predetermined thickness, so that a process can be relatively simple and can be readily carried out, thereby manufacturing an SOI substrate having a uniform silicon thickness of high quality and an ultra thin characteristic.