The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 25, 2007
Filed:
Jul. 19, 2005
Ryoichi Nagayoshi, Nishinomiya, JP;
Ryoichi Nagayoshi, Nishinomiya, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
The present invention provides a semiconductor device that can adjust signal frequency bandwidths and consumption currents to be appropriately increased or reduced in source-follower amplifiers in all stages. The semiconductor device is comprised of a source-follower amplifier including a driver transistor D, and a load transistor Lthat is connected to the driver transistor Dand driven variably depending on a signal inputted to the driver transistor, wherein a gate of the load transistor Lis applied with a variable bias voltage. The semiconductor deviceis further comprised of a source-follower amplifier including a driver transistor D, and a load circuit (load transistor L) that is connected to said second driver transistor and driven variably depending on a signal outputted from the second driver transistor D, wherein a gate of the load transistor Lis applied with a variable bias voltage to vary a resistance value of the load transistor L