The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 25, 2007
Filed:
Jul. 12, 2005
Su Jae Lee, Daejeon, KR;
Seung Eon Moon, Daejeon, KR;
Han Cheol Ryu, Seoul, KR;
Min Hwan Kwak, Daejeon, KR;
Kwang Yong Kang, Daejeon, KR;
Su Jae Lee, Daejeon, KR;
Seung Eon Moon, Daejeon, KR;
Han Cheol Ryu, Seoul, KR;
Min Hwan Kwak, Daejeon, KR;
Kwang Yong Kang, Daejeon, KR;
Abstract
A ferroelectric/paraelectric multilayer thin film having a high tuning rate of a dielectric constant and small dielectric loss to overcome limitations of a tuning rate of a dielectric constant and dielectric loss of a ferroelectric thin film, a method of forming the same, and a high frequency variable device having the ferroelectric/paraelectric multilayer thin film are provided. The ferroelectric/paraelectric multilayer thin film includes a perovskite ABOstructure paraelectric seed layer formed on a substrate, and an epitaxial ferroelectric (BaSr)TiOthin film formed on the paraelectric seed layer. The high frequency variable device can realize a RF frequency/phase variable device having a high speed, low power consumption, and low prices and excellent microwaves characteristics.