The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 25, 2007

Filed:

Aug. 04, 2004
Applicants:

Byoung-deog Choi, Seoul, KR;

Won-sik Kim, Seoul, KR;

Myeong-seob SO, Cheonan-si, KR;

Inventors:

Byoung-Deog Choi, Seoul, KR;

Won-Sik Kim, Seoul, KR;

Myeong-Seob So, Cheonan-si, KR;

Assignee:

Samsung SDI Co., Ltd., Suwon-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/04 (2006.01); H01L 29/10 (2006.01); H01L 31/00 (2006.01); H01L 29/12 (2006.01); H01L 29/786 (2006.01); H01L 27/01 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
Abstract

A TFT including a gate metallic layer, a body layer doped with a dopant having a first polarity, a source layer and a drain layer doped with a dopant having a second polarity, a semiconductor layer formed between the source layer and the drain layer, and a contact coupling the gate metallic layer and the body layer.


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