The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 25, 2007
Filed:
Oct. 20, 2005
Kee Jeung Lee, Seoul, KR;
Kee Jeung Lee, Seoul, KR;
Hynix Semiconductor Inc., Kyoungki-do, KR;
Abstract
To form a capacitor in a semiconductor device, an etching barrier layer and a mold insulating layer are sequentially formed on an interlayer insulating film having a contact plug. A hole exposing the contact plug is formed by etching the mold insulating layer and the etching barrier layer. A first blocking layer having a wet etching rate lower than that of the mold insulating layer is formed on the hole sidewall. A storage electrode and a second blocking layer made from the identical material of the first blocking layer are formed on the resultant structure. The predetermined portions of the second blocking layer and the metal layer formed on the mold insulating layer are removed. A cylinder type storage electrode is formed by wet etching the mold insulating layer. A dielectric layer is formed on the cylinder type storage electrode. A plate electrode is formed on the dielectric layer.