The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 25, 2007
Filed:
Jul. 23, 2004
Koji Takaya, Minato-ku, JP;
Koji Takaya, Minato-ku, JP;
Oki Electric Industry Co., Ltd., Tokyo, JP;
Abstract
The present invention provides a method of manufacturing a semiconductor device that can inhibit deterioration of the ferroelectric film cased by hydrogen generated in a wiring layer. The method of manufacturing a semiconductor device includes steps of forming the ferroelectric capacitor by laminating first electrodeferroelectric filmsecond electrodecovering the ferroelectric capacitor by insulating filmforming openingthat exposes the second electrodeon the insulating filmdepositing or forming conductive hydrogen protective filmforming wiring layeron the conductive hydrogen protective filmand patterning the wiring layerand the conductive hydrogen protective layerafter forming the wiring layer