The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 25, 2007
Filed:
Apr. 14, 2004
John William Krawczyk, Richmond, KY (US);
Andrew Lee Mcnees, Lexington, KY (US);
James Michael Mrvos, Lexington, KY (US);
Carl Edmond Sullivan, Stamping Ground, KY (US);
John William Krawczyk, Richmond, KY (US);
Andrew Lee McNees, Lexington, KY (US);
James Michael Mrvos, Lexington, KY (US);
Carl Edmond Sullivan, Stamping Ground, KY (US);
Lexmark International, Inc., Lexington, KY (US);
Abstract
A micro-fluid ejection assembly including a silicon substrate having accurately formed fluid paths therein. The fluid paths are formed by a deep reactive ion etching process conducted on a substrate having a surface characteristic before etching selected from the group consisting of a dielectric layer thickness of no more than about 5000 Angstroms, and a substantially dielectric material free pitted surface wherein a root mean square depth of surface pitting is less than about 500 Angstroms and a maximum surface pitting depth is no more than about 2500 Angstroms. Fluid paths in such substrates having improved flow characteristics for more reliable fluid ejection operations.