Current sense amplifier for low voltage applications with direct sensing on the bitline of a memory matrix

Abstract

A current sense amplifier, in particular for low voltage applications, of the type incorporated in a memory electronic device and including a differential amplifier having inputs respectively associated with a matrix circuit leg, connected to a cell to be sensed, and a reference circuit leg, connected a reference cell. At least the matrix circuit leg has a first MOS transistor to which an inverter is connected in a cascode configuration and a first input of the differential amplifier corresponding to the matrix circuit leg is coupled to a conduction terminal of the first MOS transistor and to the bitline of the memory matrix by a second MOS transistor.