The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 18, 2007

Filed:

May. 27, 2005
Applicant:

Ihar Kasko, Mennecy, FR;

Inventor:

Ihar Kasko, Mennecy, FR;

Assignees:

Infineon Technologies AG, Neubiberg, DE;

Altis Semiconductor SNC, Corbeil Essonnes, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 5/08 (2006.01);
U.S. Cl.
CPC ...
Abstract

A magnetoresistive memory cell includes N magnetoresistive elements conductively connected in series (where N is an integer greater than or equal to two). The magnetoresistive elements, respectively, are positioned between at least two adjacent conductive lines. At least one of the conductive lines is a partially split conductive line having at least one slit portion encompassing an interconnect running therethrough and connected to at least one adjacent magnetoresistive element.


Find Patent Forward Citations

Loading…