The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 18, 2007
Filed:
Jun. 17, 2005
Mingdeng Chen, Harleysville, PA (US);
Jonathan Fischer, Longmont, CO (US);
Mingdeng Chen, Harleysville, PA (US);
Jonathan Fischer, Longmont, CO (US);
Agere Systems Inc., Allentown, PA (US);
Abstract
A circuit is described which uses a thick gate oxide device in the input stage and a thin gate oxide device in a second stage that is connected to the input stage. The input stage thick gate oxide device provides a low input gate leakage current. The thin gate oxide device in the second stage has high performance characteristics due to the use of the thin gate oxide device. The circuit thereby has high performance characteristics and low input gate leakage current. In various applications, the circuit may be, for example, an amplifier, a differential amplifier, a variable gain differential amplifier, or an operational amplifier in a sample and hold circuit. A guideline is provided where the thick gate oxide layer is about 1.5× the thickness of the thin gate oxide layer. Also, a design to control the circuit's common mode voltage using common mode voltage feedback is described.