The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 18, 2007
Filed:
Oct. 27, 2004
Alexander Burinskiy, San Jose, CA (US);
Nathanael Griesert, Grass Valley, CA (US);
Arun Rao, Rocklin, CA (US);
William J. Mcintyre, Wheatland, CA (US);
John Philip Parry, Grass Valley, CA (US);
Alexander Burinskiy, San Jose, CA (US);
Nathanael Griesert, Grass Valley, CA (US);
Arun Rao, Rocklin, CA (US);
William J. McIntyre, Wheatland, CA (US);
John Philip Parry, Grass Valley, CA (US);
National Semiconductor Corporation, Santa Clara, CA (US);
Abstract
A multi-stage transistor circuit is provided in which the multiple transistor stages are coupled in parallel and switched individually in sequence by a series arrangement of buffers. Each buffer drives the gate of a corresponding stage of the multi-stage transistor circuit with a gating signal that is delayed by each buffer. Optionally, the voltage of the gating signal can be varied. Each transistor stage may comprise one or more transistors in parallel. A switched capacitor DC/DC converter incorporating the multi-stage transistor circuit is provided in which parasitic ringing at the output is substantially reduced or eliminated. Additionally, the multi-stage transistor circuit is well suited for implementing an adaptive non-overlapping gating signal generator for complementarily driving a series arrangement of multi-stage transistors. An adaptive gating signal generator incorporating the multi-stage transistor circuit provides the minimum dead time between the gating signals that will ensure under all conditions that the multi-stage transistors will not be on at the same time.