The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 18, 2007
Filed:
Mar. 31, 2003
Chi on Chui, San Mateo, CA (US);
Krishna C. Saraswat, Saratoga, CA (US);
Baylor B. Triplett, La Honda, CA (US);
Paul Mcintyre, Sunnyvale, CA (US);
Chi On Chui, San Mateo, CA (US);
Krishna C. Saraswat, Saratoga, CA (US);
Baylor B. Triplett, La Honda, CA (US);
Paul McIntyre, Sunnyvale, CA (US);
The Board of Trustees of the LeLand Stanford Junior University, Palo Alto, CA (US);
Abstract
Excellent capacitor-voltage characteristics with near-ideal hysteresis are realized in a capacitive-like structure that uses an electrode substrate-type material with a high-k dielectric layer having a thickness of a few-to-several Angstroms capacitance-based SiOequivalent ('T'). According to one particular example embodiment, a semiconductor device structure has an electrode substrate-type material having a Germanium-rich surface material. The electrode substrate-type material is processed to provide this particular electrode surface material in a form that is thermodynamically stable with a high-k dielectric material. A dielectric layer is then formed over the electrode surface material with the high-k dielectric material at a surface that faces, lies against and is thermodynamically stable with the electrode surface material.