The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 18, 2007
Filed:
Oct. 31, 2005
Satoe Miyata, Kyoto, JP;
Shuji Mizokuchi, Kyoto, JP;
Satoe Miyata, Kyoto, JP;
Shuji Mizokuchi, Kyoto, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
The semiconductor device includes a first semiconductor region of a first conductivity type partially extending to a top face of a semiconductor substrate; a second semiconductor region of a second conductivity type formed on the first semiconductor region; a third semiconductor region of the first conductivity type formed on the second semiconductor region; a fourth semiconductor region of the second conductivity type formed on the second semiconductor region and adjacent to the third semiconductor region; a trench penetrating through the second semiconductor region and the third semiconductor region; a gate insulating film formed on an inner wall of the trench; and a gate electrode formed on the gate insulating film within the trench. The semiconductor device further includes a fifth semiconductor region of the second conductivity type formed on the second semiconductor region to be sandwiched between the fourth semiconductor region and a portion of the first semiconductor region positioned on a side of the fourth semiconductor region. An impurity concentration in the fifth semiconductor region is higher than an impurity concentration in the second semiconductor region.