The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 18, 2007

Filed:

Oct. 22, 2004
Applicants:

Naochika Horio, Tokyo, JP;

Masahiko Tsuchiya, Tokyo, JP;

Munehiro Kato, Tokyo, JP;

Inventors:

Naochika Horio, Tokyo, JP;

Masahiko Tsuchiya, Tokyo, JP;

Munehiro Kato, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2006.01); H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 21/00 (2006.01); H01L 21/44 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor LED device includes: a transparent substrate stacked on which are an n-type nitride semiconductor layer, a nitride semiconductor light emission layer and a p-type nitride semiconductor layer; recess regions cutting the p-type layer and light emission layer and exposing the n-type layer, defining a plurality of mesa active regions and mesa electrode pull-up regions; an n-side electrode formed on the n-type layer in the recess surrounding the mesa active regions and extending onto the mesa electrode pull-up regions; a p-side electrode formed on the p-type layer of each of the mesa active regions; and a support substrate including n-side connection members connected to and facing the n-type electrodes and p-side connection members connected to and facing the p-side electrodes.


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