The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 18, 2007
Filed:
Oct. 20, 2003
Robert A. August, Solomons, MD (US);
Harold L. Hughes, West River, MD (US);
Patrick J. Mcmarr, Springfield, VA (US);
Robert R. Whitlock, Bethesda, MD (US);
Robert A. August, Solomons, MD (US);
Harold L. Hughes, West River, MD (US);
Patrick J. McMarr, Springfield, VA (US);
Robert R. Whitlock, Bethesda, MD (US);
United States of America as represented by the Secretary of the Navy, Washington, DC (US);
Abstract
A neutron detection device includes a neutron conversion layer in close proximity to an active semiconductor layer. The device is preferably based on the modification of existing conventional semiconductor memory devices. The device employs a conventional SRAM memory device that includes an SOI substrate. The SOI substrate includes an active semiconductor device layer, a base substrate and an insulating layer between the active semiconductor device layer and the base substrate. The base substrate layer is removed from the memory device by lapping, grinding and/or etching to expose the insulating layer. A neutron conversion layer is then formed on the insulating layer. The close proximity of the neutron conversion layer to the active semiconductor device layer yields substantial improvements in device sensitivity.