The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 18, 2007
Filed:
Aug. 31, 2005
Tingkai LI, Vancouver, WA (US);
Sheng Teng Hsu, Camas, WA (US);
Wei-wei Zhuang, Vancouver, WA (US);
David R. Evans, Beaverton, OR (US);
Tingkai Li, Vancouver, WA (US);
Sheng Teng Hsu, Camas, WA (US);
Wei-Wei Zhuang, Vancouver, WA (US);
David R. Evans, Beaverton, OR (US);
Sharp Laboratories of America, Inc., Camas, WA (US);
Abstract
A method is provided for forming a metal/semiconductor/metal (MSM) current limiter and resistance memory cell with an MSM current limiter. The method includes the steps of: providing a substrate; forming an MSM bottom electrode overlying the substrate; forming a ZnOx semiconductor layer overlying the MSM bottom electrode, where x is in the range between about 1 and about 2, inclusive; and, forming an MSM top electrode overlying the semiconductor layer, The ZnOx semiconductor can be formed through a number of different processes such as spin-coating, direct current (DC) sputtering, radio frequency (RF) sputtering, metalorganic chemical vapor deposition (MOCVD), or atomic layer deposition (ALD).