The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 18, 2007
Filed:
Jun. 13, 2005
Hiroyuki Tomonaga, Yokohama, JP;
Katsuaki Miyatani, Yokohama, JP;
Yoshihisa Beppu, Yokohama, JP;
Kumiko Takahashi, Yokohama, JP;
Kazuo Sunahara, Yokohama, JP;
Hiroyuki Tomonaga, Yokohama, JP;
Katsuaki Miyatani, Yokohama, JP;
Yoshihisa Beppu, Yokohama, JP;
Kumiko Takahashi, Yokohama, JP;
Kazuo Sunahara, Yokohama, JP;
Asahi Glass Company, Limited, Tokyo, JP;
Abstract
To provide a composition for forming a dielectric layer excellent in dielectric constant and withstand voltage properties, a MIM capacitor and a process for its production. A composition for forming a dielectric layer, which comprises fine particles of perovskite type dielectric crystal, glass frit, and a hydrolysable silicon compound or its oligomer, and a MIM capacitor comprising a substrate, and a bottom electrode layer, a dielectric layer having a structure such that fine particles of perovskite type dielectric crystal are dispersed in a silicon oxide matrix containing glass-forming ions and a top electrode, formed on the substrate in this order.