The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 18, 2007

Filed:

Mar. 15, 2005
Applicants:

Shawn Marie Collier Hernandez, Gilroy, CA (US);

Wipul Pemsiri Jayasekara, Los Gatos, CA (US);

Timothy J. Minvielle, San Jose, CA (US);

Benjamin LU Chen Wang, Cambridge, MA (US);

Howard Gordon Zolla, San Jose, CA (US);

Inventors:

Shawn Marie Collier Hernandez, Gilroy, CA (US);

Wipul Pemsiri Jayasekara, Los Gatos, CA (US);

Timothy J. Minvielle, San Jose, CA (US);

Benjamin Lu chen Wang, Cambridge, MA (US);

Howard Gordon Zolla, San Jose, CA (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B44C 1/22 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method is presented for fabricating a read head having a read head sensor and a hard bias/lead layer which includes depositing a strip of sensor material in a sensor material region, and depositing strips of fast-milling dielectric material in first and second fast-milling dielectric material regions adjacent to the sensor material region. A protective layer and a layer of masking material is deposited on the strip of sensor material and the strips of fast-milling dielectric material to provide masked areas and exposed areas. A shaping source, such as an ion milling source, is provided which shapes the exposed areas. Hard bias/lead material is then deposited on the regions of sensor material and fast-milling dielectric material to form first and second leads and a cap on each of these regions. The cap of hard bias/lead material and the masking material is then removed from each of these regions.


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