The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 11, 2007

Filed:

Jul. 06, 2004
Applicants:

Ashish Tandon, Sunnyvale, CA (US);

Michael R. T. Tan, Menlo Park, CA (US);

Ying-lan Chang, Cupertino, CA (US);

Inventors:

Ashish Tandon, Sunnyvale, CA (US);

Michael R. T. Tan, Menlo Park, CA (US);

Ying-Lan Chang, Cupertino, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

The method comprises forming barrier layers of AlGaAs, forming a quantum well layer of InGaAs between the barrier layers, and forming an interfacial layer between the quantum well layer and each of the barrier layers.


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