The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 11, 2007
Filed:
Mar. 06, 2006
David Fong, Cupertino, CA (US);
Jianguo Wang, Cupertino, CA (US);
Jack Zezhong Peng, San Jose, CA (US);
Harry Shengwen Luan, Saratoga, CA (US);
David Fong, Cupertino, CA (US);
Jianguo Wang, Cupertino, CA (US);
Jack Zezhong Peng, San Jose, CA (US);
Harry Shengwen Luan, Saratoga, CA (US);
Kilopass Technology, Inc., Santa Clara, CA (US);
Abstract
Methods and apparatus for decreasing oxide stress and increasing reliability of memory transistors are disclosed. Duration and frequency of exposure of memory transistor gates to read signals are significantly reduced. In some embodiments, after a short read cycle, the content of the memory cell is latched and maintained as long as the subsequent read attempts are directed to the same memory cell. In these embodiments the read cycle need only be long enough to latch the memory content of the cell, and as long as the subsequent read attempts target the same memory cell the latched value will be used instead of repeating the read process.