The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 11, 2007
Filed:
Jan. 23, 2007
Kenya Sano, Kawasaki, JP;
Naoko Yanase, Kawasaki, JP;
Kazuhiko Itaya, Yokohama, JP;
Takaaki Yasumoto, Kawasaki, JP;
Ryoichi Ohara, Kawasaki, JP;
Takashi Kawakubo, Yokohama, JP;
Takako Motai, Yokohama, JP;
Kenya Sano, Kawasaki, JP;
Naoko Yanase, Kawasaki, JP;
Kazuhiko Itaya, Yokohama, JP;
Takaaki Yasumoto, Kawasaki, JP;
Ryoichi Ohara, Kawasaki, JP;
Takashi Kawakubo, Yokohama, JP;
Takako Motai, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A film bulk acoustic-wave resonator having, a substrate having a cavity, the substrate being formed of one of semi-insulating material and high-resistivity material, a bottom electrode partially fixed to the substrate, part of the bottom electrode is mechanically suspended above the cavity, a piezoelectric layer disposed on the bottom electrode, the shape of the piezoelectric layer is defined by a contour, a top electrode on the piezoelectric layer, a semiconductor intermediate electrode buried at and in a surface of the substrate, being located at the contour of the piezoelectric layer, the semiconductor region having a lower resistivity than the substrate, the intermediate electrode is connected to the bottom electrode in the inside of the contour, and a bottom electrode wiring connected to the semiconductor intermediate electrode extending from the contour to an outside of the contour in the plan view.