The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 11, 2007
Filed:
Jun. 29, 2005
Hector Sanchez, Cedar Park, TX (US);
Carlos A. Greaves, Austin, TX (US);
Jim P. Nissen, Austin, TX (US);
Xinghai Tang, Cedar Park, TX (US);
Hector Sanchez, Cedar Park, TX (US);
Carlos A. Greaves, Austin, TX (US);
Jim P. Nissen, Austin, TX (US);
Xinghai Tang, Cedar Park, TX (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
A level shifter circuit including first and second circuits and a protection layer. The first circuit receives an input signal and switches first and second nodes to opposite states within a first voltage range between first and second supply voltages. The second circuit switches the third and fourth nodes to opposite states within a second voltage range between third and fourth supply voltages in response to switching of the first and second nodes. The protection layer couples the first and second nodes to third and fourth nodes via respective first and second isolation paths. The isolation paths operate to keep the first and second nodes within the first voltage range and to keep the third and fourth nodes within the second voltage range. Isolation enables the use of thin gate-oxide devices for speed while extending the voltage range beyond the maximum voltage allowable for a single thin gate-oxide device.