The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 11, 2007
Filed:
Dec. 26, 2003
Tsutomu Ichihara, Hirakata, JP;
Takuya Komoda, Sanda, JP;
Koichi Aizawa, Neyagawa, JP;
Yoshiaki Honda, Kyoto, JP;
Toru Baba, Shijonawate, JP;
Tsutomu Ichihara, Hirakata, JP;
Takuya Komoda, Sanda, JP;
Koichi Aizawa, Neyagawa, JP;
Yoshiaki Honda, Kyoto, JP;
Toru Baba, Shijonawate, JP;
Matsushita Electric Works, Ltd., Osaka, JP;
Abstract
A field emission-type electron source has a plurality of electron source elements () formed on the side of one surface (front surface) of an insulative substrate () composed of a glass substrate. Each of electron source elements () includes a lower electrode (), a buffer layer () composed of an amorphous silicon layer formed on the lower electrode (), a polycrystalline silicon layer () formed on the buffer layer (), a strong-field drift layer () formed on the polycrystalline silicon layer (), and a surface electrode () formed on the strong-field drift layer (). The field emission-type electron source can achieved reduced in-plain variation in electron emission characteristics.