The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 11, 2007
Filed:
Nov. 12, 2003
Takamitsu Higuchi, Nagano-ken, JP;
Setsuya Iwashita, Nagano-ken, JP;
Hiromu Miyazawa, Nagano-ken, JP;
Koji Sumi, Nagano-ken, JP;
Masami Murai, Nagano-ken, JP;
Maki Ito, Nagano-ken, JP;
LI Xin-shan, Nagano-ken, JP;
Takamitsu Higuchi, Nagano-ken, JP;
Setsuya Iwashita, Nagano-ken, JP;
Hiromu Miyazawa, Nagano-ken, JP;
Koji Sumi, Nagano-ken, JP;
Masami Murai, Nagano-ken, JP;
Maki Ito, Nagano-ken, JP;
Li Xin-Shan, Nagano-ken, JP;
Seiko Epson Corporation, Tokyo, JP;
Abstract
An intermediate film () is formed on a substrate (), a bottom electrode () is formed on top of this intermediate film, a ferroelectric film () or piezoelectric film () is formed on top of this bottom electrode by an ion beam assist method, and a top electrode () is formed on top of this ferroelectric film or piezoelectric film. The ferroelectric film or piezoelectric film is formed by PZT, BST or a relaxer material. As a result of the use of an ion beam assist method in the formation of any one of the intermediate film, bottom electrode, ferroelectric film or piezoelectric film, a piezoelectric device or ferroelectric device which has a piezoelectric film or ferroelectric film with an in-plane orientation can be manufactured with good efficiency.