The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 11, 2007
Filed:
Aug. 14, 2006
Applicants:
Vladislav Vashchenko, Palo Alto, CA (US);
Ann Concannon, Palo Alto, CA (US);
Peter J. Hopper, San Jose, CA (US);
Inventors:
Vladislav Vashchenko, Palo Alto, CA (US);
Ann Concannon, Palo Alto, CA (US);
Peter J. Hopper, San Jose, CA (US);
Assignee:
National Semiconductor Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/60 (2006.01); H01L 82/8249 (2006.01); H02H 3/20 (2006.01);
U.S. Cl.
CPC ...
Abstract
In an NMOS device, the turn-on voltage or the triggering voltage is reduced by adding an NBL connected to an n-sinker and contacted through an n+ region, which is connected to a bias voltage. The bias voltage may be provided by the drain contact or by a separate bias voltage.