The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 11, 2007
Filed:
Sep. 15, 2005
Young SE Kwon, Daejeon, KR;
Jung Ho Cha, Daejeon, KR;
Young Se Kwon, Daejeon, KR;
Jung Ho Cha, Daejeon, KR;
Korea Advanced Institute of Science and Technology, Daejeo, KR;
Abstract
Disclosed is a method of manufacturing a photoreceiver, including sequentially laminating a buffer layer, a channel layer, a barrier layer, and a cap layer on a substrate; forming a mesa for HEMT and MSM PD by removing the buffer layer, the channel layer, the barrier layer, and the cap layer with the exception of a region corresponding to HEMT and MSM PD; forming a source electrode and a drain electrode of HEMT; removing the cap layer from a region corresponding to a gate electrode of HEMT and a Schottky electrode of MSM PD; forming the gate electrode of HEMT and the Schottky electrode of HEMT on the cap layer-removed region; and removing the cap layer, the barrier layer and the channel layer from a region corresponding to an optical waveguide, to expose the optical waveguide.