The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 11, 2007
Filed:
Oct. 07, 2004
Toshikazu Onishi, Kyoto, JP;
Kenichi Inoue, Osaka, JP;
Toshikazu Onishi, Kyoto, JP;
Kenichi Inoue, Osaka, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
A first semiconductor layer consisting of AlGaInP is formed on a substrate consisting of GaAs by crystal growth while adding magnesium (Mg) that is a p-type dopant to the first semiconductor layer. A second semiconductor layer consisting of GaAs is then grown on the first semiconductor layer without adding any magnesium to the second semiconductor layer. Thus, the second semiconductor layer can prevent unintended doping (memory effect) produced by magnesium.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile