The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 11, 2007
Filed:
Dec. 03, 2004
Hirokazu Hayashi, Tokyo, JP;
Hirokazu Hayashi, Tokyo, JP;
Oki Electric Industry Co., Ltd., Tokyo, JP;
Abstract
The present invention provides a method of evaluating a semiconductor device having an ESD protective element, wherein a MOSFET is formed on the same substrate, comprising a step (electric characteristic measurement) for measuring an electric characteristic of the MOSFET, a step (snapback characteristic measurement) for measuring a snapback characteristic of the MOSFET, a step (impurity profile extraction) for extracting an impurity profile of the MOSFET from the electric characteristic and snapback characteristic of the MOSFET by using an inverse modeling technique, and a step (impurity profile adaptation) for causing the extracted impurity profile of the MOSFET and an impurity profile of the ESD protective element to correspond to each other, whereby the impurity profile of the ESD protective element is evaluated from the electric characteristic.