The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 11, 2007
Filed:
Aug. 20, 2004
Fengyan Zhang, Vancouver, WA (US);
David R. Evans, Beaverton, OR (US);
Wei Pan, Vancouver, WA (US);
Lisa H. Stecker, Vancouver, WA (US);
Jer-shen Maa, Vancouver, WA (US);
Fengyan Zhang, Vancouver, WA (US);
David R. Evans, Beaverton, OR (US);
Wei Pan, Vancouver, WA (US);
Lisa H. Stecker, Vancouver, WA (US);
Jer-Shen Maa, Vancouver, WA (US);
Sharp Laboratories of America, Inc., Camas, WA (US);
Abstract
A method of etching an iridium layer for use in a ferroelectric device includes preparing a substrate; depositing a barrier layer on the substrate; depositing an iridium layer on the barrier layer; depositing a hard mask layer on the iridium layer; depositing, patterning and developing a photoresist layer on the hard mask; etching the hard mask layer; etching the iridium layer using argon, oxygen and chlorine chemistry in a high-density plasma reactor; and completing the ferroelectric device.