The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 04, 2007
Filed:
Jul. 25, 2005
Trevis Chandler, Brantford, CA;
Ali Sheikholeslami, Toronto, CA;
Shoichi Masui, Kawasaki, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
For a predetermined period from the start of a read operation, an electric current is fed to bit lines connected with memory cells so that ferroelectric capacitors of the memory cells are charged. The voltage change of the bit lines are different according to the logic values of data stored in the ferroelectric capacitors. Therefore, the logic value stored in the memory cells can be detected as a time difference. Even if the voltage change of the bit lines is small, the time difference can be reliably generated. Even in case the residual dielectric polarization value of the ferroelectric capacitor is low, therefore, the data can be reliably read from the memory cells. In short, the read margin of data can be better improved than in the case where the logic value of data is detected with a voltage difference.