The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 04, 2007
Filed:
Aug. 07, 2003
Masahiro Tada, Fukaya, JP;
Takashi Nakamura, Kumagaya, JP;
Norio Tada, Kumagaya, JP;
Masahiro Yoshida, Fukaya, JP;
Masahiro Tada, Fukaya, JP;
Takashi Nakamura, Kumagaya, JP;
Norio Tada, Kumagaya, JP;
Masahiro Yoshida, Fukaya, JP;
Toshiba Matsushita Display Technology Co., Ltd., Tokyo, JP;
Abstract
In a manufacturing process of a display device, hydrogenation in an I layer of photodiodes Dand Dis progressed less than that in a channel portion of a pixel TFT, and a defect density due to dangling bonds not terminated in the I layer of the photodiodes Dand Dis made higher than a defect density in the channel portion of the pixel TFT. Thus, while suppressing a leakage current of the pixel TFT, the sensitivity of the photodiodes Dand Dto light is improved. Moreover, a gate electrode is provided above an i region of a pin-type optical sensor diode with an insulating film interposed therebetween. Thus, a gate voltage can control a threshold of a bias voltage when a current starts to flow into the optical sensor diode and a leakage current is prevented from flowing into the optical sensor diode.