The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 04, 2007

Filed:

Aug. 29, 2005
Applicants:

Talee Yu, Shanghai, CN;

Chi Kang Liu, Shanghai, CN;

Inventors:

Talee Yu, Shanghai, CN;

Chi Kang Liu, Shanghai, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/62 (2006.01);
U.S. Cl.
CPC ...
Abstract

Techniques for ESD protection are provided. An ESD protection device includes a first well region and a second well region disposed in a semiconductor substrate, with an isolation region therebetween. N+ implant regions are disposed in the second well region and are coupled in common at a first node. NLDD regions are disposed between the N+ implant regions, and pocket implants underlie each of the NLDD regions. Current discharge paths are defined by corresponding NLDD regions and pocket implants when a voltage of the first node exceeds a breakdown voltage. In a specific embodiment, the breakdown voltage is less than a breakdown voltage for a logic gate oxide.


Find Patent Forward Citations

Loading…