The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 04, 2007
Filed:
Jun. 14, 2005
Toshio Kobayashi, Kanagawa, JP;
Hideto Tomiie, Kanagawa, JP;
Toshio Kobayashi, Kanagawa, JP;
Hideto Tomiie, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
A non-volatile semiconductor memory having a memory transistor including a stacked-layer film formed between a semiconductor substrate and a gate electrode and having a charge storage ability, a first conductivity type region of the semiconductor substrate in which a channel is formed under the control of the gate electrode via the stacked-layer film, and two second conductivity type regions formed at the semiconductor substrate sandwiching the first conductivity type region therebetween, the memory transistor having a channel length L which is between channel lengths Land L. with the channel length Lbeing estimated as the boundary of occurrence of a short channel effect at the time of a write operation and the channel length Lthe time of a read operation, with the channel length Lbeing different from the channel length L