The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 04, 2007
Filed:
Jun. 09, 2005
Masaomi Yamaguchi, Kawasaki, JP;
Hiroshi Minakata, Kawasaki, JP;
Tsunehisa Sakoda, Kawasaki, JP;
Kazuto Ikeda, Kawasaki, JP;
Masaomi Yamaguchi, Kawasaki, JP;
Hiroshi Minakata, Kawasaki, JP;
Tsunehisa Sakoda, Kawasaki, JP;
Kazuto Ikeda, Kawasaki, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
A semiconductor device manufacture method has the steps of: (a) forming an interface layer of SiO or SiON on the surface of an active region of a silicon substrate; (b) forming a high dielectric constant gate insulating film such as HfSiON having a dielectric constant higher than that of silicon oxide, above the interface layer; (c) forming a gate electrode of polysilicon above the high dielectric constant gate insulating film; (d) passivating the substrate surface at least before or after the high dielectric constant gate insulating film is formed; (e) forming an insulated gate electrode structure by patterning at least the gate electrode and the high dielectric constant gate insulating film; and (f) forming source/drain regions in the active region on both sides of the insulated gate electrode structure. The semiconductor device has the high dielectric constant insulating film having a dielectric constant higher than that of silicon oxide.