The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 04, 2007
Filed:
Aug. 30, 2001
John Robertson Tower, Yardley, PA (US);
Peter Alan Levine, West Windsor, NJ (US);
Pradyumna Kumar Swain, Franklin Park, NJ (US);
Nathaniel Joseph Mccaffrey, Rosemont, NJ (US);
Taner Dosluoglu, New York, NY (US);
John Robertson Tower, Yardley, PA (US);
Peter Alan Levine, West Windsor, NJ (US);
Pradyumna Kumar Swain, Franklin Park, NJ (US);
Nathaniel Joseph McCaffrey, Rosemont, NJ (US);
Taner Dosluoglu, New York, NY (US);
Sarnoff Corporation, Princeton, NJ (US);
Abstract
An optical sensor circuit for generating signals corresponding to received photoelectrons is formed on a single monolithic substrate and includes a charge coupled device (CCD) array. The array is formed of a plurality of pixels constructed by a standard CMOS process. Each pixel is formed of at least one charge well of minority carriers and a gate oxide layer overlaying the at least one charge well. At least two spaced gate electrodes corresponding in position to the at least two charge wells overlays the gate oxide layer. The space between adjacent electrodes defines a gap to transfer charge between adjacent ones of at the least two spaced gate electrodes and the gap is stabilized. A back-illuminated imager is also described in which photocarriers are diverted from devices integrated with the pixel by a PN junction formed in the pixel structure.