The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 04, 2007
Filed:
Aug. 30, 2004
Kenji Fukuda, Tsukuba, JP;
Ryouji Kosugi, Tsukuba, JP;
Shinsuke Harada, Tsukuba, JP;
Junji Senzaki, Tsukuba, JP;
Kazutoshi Kojima, Tsukuba, JP;
Satoshi Kuroda, Tsukuba, JP;
Kenji Fukuda, Tsukuba, JP;
Ryouji Kosugi, Tsukuba, JP;
Shinsuke Harada, Tsukuba, JP;
Junji Senzaki, Tsukuba, JP;
Kazutoshi Kojima, Tsukuba, JP;
Satoshi Kuroda, Tsukuba, JP;
Abstract
A semiconductor device formed on a silicon carbide semiconductor substrate comprises an epitaxial layer formed on a surface sloping (or inclining) by 0 to less than 1 degree from a (000-1) face of the silicon carbide semiconductor substrate, wherein at least one of a P type semiconductor area or an N type semiconductor area is selectively formed in the epitaxial layer by ion implantation, a metal electrode is formed so as to contact a surface layer of the P type semiconductor area or the N type semiconductor area, a rectification function is shown between the metal electrode and the P type semiconductor area or the N type semiconductor area, and the semiconductor device is formed on the silicon carbide semiconductor substrate of a Schottky barrier diode or a PN type diode.