The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 04, 2007
Filed:
Dec. 30, 2003
Applicants:
Jae-geun OH, Kyoungki-do, KR;
Byung-seop Hong, Kyoungki-do, KR;
Inventors:
Jae-Geun Oh, Kyoungki-do, KR;
Byung-Seop Hong, Kyoungki-do, KR;
Assignee:
Hynix Semiconductor, Inc., Ichon-Si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/425 (2006.01);
U.S. Cl.
CPC ...
Abstract
The present invention relates to a method for fabricating a semiconductor device with improved refresh time. The method includes the steps of: forming a plurality of gate lines on a substrate; forming a plurality of cell junctions by ion-implanting a first dopant with use of the gate lines as a mask; forming a buffer layer along a gate line profile; and forming a plurality of plug ion-implantation regions in the cell junctions by ion-implanting a second dopant into the substrate under the presence of the buffer layer to thereby from the plugs thereon.