The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 04, 2007
Filed:
Jul. 23, 2004
Applicants:
Sheeba J. Panayil, Santa Clara, CA (US);
Ming LI, Cupertino, CA (US);
Shulin Wang, Campbell, CA (US);
Jonathan C. Pickering, Los Gatos, CA (US);
Inventors:
Sheeba J. Panayil, Santa Clara, CA (US);
Ming Li, Cupertino, CA (US);
Shulin Wang, Campbell, CA (US);
Jonathan C. Pickering, Los Gatos, CA (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01);
U.S. Cl.
CPC ...
Abstract
Numerous embodiments of a method for depositing a layer of nano-crystal silicon on a substrate. In one embodiment of the present invention, a substrate is placed in a single wafer chamber and heated to a temperature between about 300° C. to about 490° C. A silicon source is also fed into the single wafer chamber.