The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 04, 2007
Filed:
Dec. 28, 2004
Applicant:
Chee Hong Choi, Busan, KR;
Inventor:
Chee Hong Choi, Busan, KR;
Assignee:
Dongbu Electronics Co., Ltd., Seoul, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01);
U.S. Cl.
CPC ...
Abstract
An isolation method in a semiconductor device is disclosed. The example method sequentially forms a pad oxide layer and a pad nitride layer on a semiconductor substrate, patterns the pad nitride and oxide layers to form an opening exposing a portion of the substrate, and forms a trench in exposed portion of the substrate. The example method also etches the patterned pad nitride layer to extend the opening, carries out SAC oxidation on the extended opening and the trench to provide a rounded corner to an upper corner of the substrate in the vicinity of the trench, and fills the trench with an insulating layer.