The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 04, 2007
Filed:
Apr. 06, 2005
Moritz Haupt, Dresden, DE;
Andreas Klipp, Dresden, DE;
Hans-peter Sperlich, Dresden, DE;
Momtchill Stavrev, Dresden, DE;
Stephan Wege, Weissig, DE;
Moritz Haupt, Dresden, DE;
Andreas Klipp, Dresden, DE;
Hans-Peter Sperlich, Dresden, DE;
Momtchill Stavrev, Dresden, DE;
Stephan Wege, Weissig, DE;
Infineon Technologies AG, Munich, DE;
Abstract
The present invention provides a fabrication method for a semiconductor structure having the steps of providing a semiconductor substrate (); providing and patterning a silicon nitride layer () on the semiconductor substrate () as topmost layer of a trench etching mask; forming a trench () in a first etching step by means of the trench etching mask; conformally depositing a liner layer () made of silicon oxide above the resulting structure, which leaves a gap (SP) reaching into the depth in the trench (); carrying out a V plasma etching step for forming a V profile of the line layer () in the trench (); wherein the liner layer () is pulled back to below the top side of the silicon nitride layer (); an etching gas mixture comprises CF, Oand an inert gas is used in the V plasma etching step; the ratio (V) of CF/Olies between 2.5 and 3.5; and the selectivity of the V plasma etching step between silicon oxide and silicon nitride is at least 10.