The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 04, 2007
Filed:
Jul. 07, 2005
Carlos J.r.p. Augusto, San Jose, CA (US);
Lynn Forester, San Jose, CA (US);
Carlos J.R.P. Augusto, San Jose, CA (US);
Lynn Forester, San Jose, CA (US);
Quantum Semiconductor LLC, San Jose, CA (US);
Abstract
A method of fabricating heterojunction devices, in which heterojunction devices are epitaxially formed on active area regions surrounded by field oxide regions and containing embedded semiconductor wells. The epitaxial growth of the heterojunction device layers may be selective or not and the epitaxial layer may be formed so as to contact individually each one of a plurality of heterojunction devices or contact a plurality of heterojunction devices in parallel. This method can be used to fabricate three-terminal devices and vertically stacked devices.