The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 04, 2007
Filed:
May. 07, 2004
Liang-ying Huang, Hsin Chu, TW;
Jia-chong Ho, Taipei Hsien, TW;
Cheng-chung Lee, Hsin Chu Hsien, TW;
Tarng-shiang HU, Hsin Chu, TW;
Wen-kuei Huang, Chia I, TW;
Wei-ling Lin, Nan Tou, TW;
Cheng-chung Hsieh, Tai Chung, TW;
Liang-Ying Huang, Hsin Chu, TW;
Jia-Chong Ho, Taipei Hsien, TW;
Cheng-Chung Lee, Hsin Chu Hsien, TW;
Tarng-Shiang Hu, Hsin Chu, TW;
Wen-Kuei Huang, Chia I, TW;
Wei-Ling Lin, Nan Tou, TW;
Cheng-Chung Hsieh, Tai Chung, TW;
Industrial Technology Research Institute, Hsinchu Hsien, TW;
Abstract
An organic thin-film transistor and a method for manufacturing the same are described. The method forms a gate layer on a substrate, an insulator layer on the substrate, forming a semiconductor layer on the insulator layer, and a strip for defining a channel length on the semiconductor layer. An electrode layer is screen printed on the semiconductor layer, and a passivation layer is coated on the electrode layer. The organic thin-film transistor manufactured by the method of the invention has a substrate, a gate layer formed on the substrate, an insulator layer formed on the substrate, a semiconductor layer formed on the insulator layer, a strip for defining a channel length formed on the semiconductor layer, an electrode layer screen-printed on the semiconductor layer, and a passivation layer coated on the electrode layer. Thereby, an organic thin-film transistor with a top-contact/bottom-gate structure is obtained.